Characterization of integrated Bragg gratings in silicon-on-insulator

Tashtush, Aktham Atallah Mofleh (2013) Characterization of integrated Bragg gratings in silicon-on-insulator. [Laurea magistrale], Università di Bologna, Corso di Studio in Ingegneria delle telecomunicazioni [LM-DM270]
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Silicon-on-insulator (SOI) is rapidly emerging as a very promising material platform for integrated photonics. As it combines the potential for optoelectronic integration with the low-cost and large volume manufacturing capabilities and they are already accumulate a huge amount of applications in areas like sensing, quantum optics, optical telecommunications and metrology. One of the main limitations of current technology is that waveguide propagation losses are still much higher than in standard glass-based platform because of many reasons such as bends, surface roughness and the very strong optical confinement provided by SOI. Such high loss prevents the fabrication of efficient optical resonators and complex devices severely limiting the current potential of the SOI platform. The project in the first part deals with the simple waveguides loss problem and trying to link that with the polarization problem and the loss based on Fabry-Perot Technique. The second part of the thesis deals with the Bragg Grating characterization from again the point of view of the polarization effect which leads to a better stop-band use filters. To a better comprehension a brief review on the basics of the SOI and the integrated Bragg grating ends up with the fabrication techniques and some of its applications will be presented in both parts, until the end of both the third and the fourth chapters to some results which hopefully make its precedent explanations easier to deal with.

Tipologia del documento
Tesi di laurea (Laurea magistrale)
Autore della tesi
Tashtush, Aktham Atallah Mofleh
Relatore della tesi
Corso di studio
Communication networks, systems and services
Ordinamento Cds
Parole chiave
Photonics, Bragg Grating, Silicon, Waveguide, Optics, integrated, SOI, Silicon on insulator, loss, propagation, coupling.
Data di discussione della Tesi
18 Dicembre 2013

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