D'Amico, Lia Giulia
(2022)
Characterization of innovative kerfless cutting of monocrystalline silicon wafers for photovoltaic applications.
[Laurea magistrale], Università di Bologna, Corso di Studio in
Physics [LM-DM270]
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Abstract
Nowadays renewable energies are a hot research topic, and the goal is to improve cell efficiency and reduce production costs, aiming to make the use of photovoltaics increasingly widespread and convenient. Monocrystalline silicon solar cells are leaders in the photovoltaic market. However, market-established cutting techniques produce a consistent amount of material waste when cutting ingots into wafers. The“Stress-induced LIft-Off Method” (SLIM) is emerging in recent years as an alternative, more sustainable separation technique, which reduces material loss and can lead to obtaining increasingly thinner wafers, further reducing the required amount of silicon.
This thesis presents the micro-characterization of the separated wafers with the SLIM technique. The wafers were obtained with a two-step procedure. First, a layer of defects was induced in the silicon using ultra-short medium-infrared laser pulses. Then, the material was deposited on one of the sides and induced stress in the silicon, such as to further weaken it. In this way, only rapid cooling is required for detachment to occur. The obtained results indicate that the SLIM-cut technique halves the minority carriers’ lifetime. There is no amorphization, crystal disorder or high-pressure phases.
However, changes in the Raman spectra suggest that tensile stress may have been produced on these surface layers by the separation process. The AFM topography highlights surface irregularities, which may be removed with a polishing step. The surface also shows laser-modified regions, which are evident in SEM images, but not in AFM topographies, suggesting a charging effect due to electron bombardment. Lastly, the electrical characterization by conductive AFM lacks any changes in the conductive behaviour of the material where the laser-modified areas should be located.
In conclusion, these preliminary results are promising to carry out a systematic characterization of this technique of this innovative SLIM technique.
Abstract
Nowadays renewable energies are a hot research topic, and the goal is to improve cell efficiency and reduce production costs, aiming to make the use of photovoltaics increasingly widespread and convenient. Monocrystalline silicon solar cells are leaders in the photovoltaic market. However, market-established cutting techniques produce a consistent amount of material waste when cutting ingots into wafers. The“Stress-induced LIft-Off Method” (SLIM) is emerging in recent years as an alternative, more sustainable separation technique, which reduces material loss and can lead to obtaining increasingly thinner wafers, further reducing the required amount of silicon.
This thesis presents the micro-characterization of the separated wafers with the SLIM technique. The wafers were obtained with a two-step procedure. First, a layer of defects was induced in the silicon using ultra-short medium-infrared laser pulses. Then, the material was deposited on one of the sides and induced stress in the silicon, such as to further weaken it. In this way, only rapid cooling is required for detachment to occur. The obtained results indicate that the SLIM-cut technique halves the minority carriers’ lifetime. There is no amorphization, crystal disorder or high-pressure phases.
However, changes in the Raman spectra suggest that tensile stress may have been produced on these surface layers by the separation process. The AFM topography highlights surface irregularities, which may be removed with a polishing step. The surface also shows laser-modified regions, which are evident in SEM images, but not in AFM topographies, suggesting a charging effect due to electron bombardment. Lastly, the electrical characterization by conductive AFM lacks any changes in the conductive behaviour of the material where the laser-modified areas should be located.
In conclusion, these preliminary results are promising to carry out a systematic characterization of this technique of this innovative SLIM technique.
Tipologia del documento
Tesi di laurea
(Laurea magistrale)
Autore della tesi
D'Amico, Lia Giulia
Relatore della tesi
Correlatore della tesi
Scuola
Corso di studio
Indirizzo
MATERIALS PHYSICS AND NANOSCIENCE
Ordinamento Cds
DM270
Parole chiave
silicon wafer,photovoltaics,laser-writing,monocrystalline silicon,wafer separation
Data di discussione della Tesi
28 Ottobre 2022
URI
Altri metadati
Tipologia del documento
Tesi di laurea
(NON SPECIFICATO)
Autore della tesi
D'Amico, Lia Giulia
Relatore della tesi
Correlatore della tesi
Scuola
Corso di studio
Indirizzo
MATERIALS PHYSICS AND NANOSCIENCE
Ordinamento Cds
DM270
Parole chiave
silicon wafer,photovoltaics,laser-writing,monocrystalline silicon,wafer separation
Data di discussione della Tesi
28 Ottobre 2022
URI
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