QUANTUM MECHANICAL Study and Modelling of MOLECULAR ELECTRONIC DEVICES

Baniahmad, Ata (2017) QUANTUM MECHANICAL Study and Modelling of MOLECULAR ELECTRONIC DEVICES. [Laurea magistrale], Università di Bologna, Corso di Studio in Ingegneria elettronica [LM-DM270]
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Abstract

Molecular electronics pursues the use of molecules as fundamental electronic components. The inherent properties of molecules such as nano-size, low cost, scalability, and self-assembly are seen by many as a perfect complement to conventional silicon electronics. Molecule based electronics has captured the attention of a broad cross section of the scientific community. In molecular electronic devices, the possibility of having channels that are just one atomic layer thick, is perhaps the most attractive feature that takes the attention to graphene.The conductivity, stability, uniformity, composition, and 2D nature of graphene make it an excellent material for electronic devices. In this thesis we focused on Zigzag Graphene NanoRibbon(ZGNR) as a transmission channel. Due to the importance of an accurate description of the quantum effects in the operation of graphene devices, a full-quantum transport model has been adopted: the electron dynamics has been described by Density Functional Theory(DFT) and transport has been solved within the formalism of Non-Equilibrium Green’s Functions (NEGF). Using DFT and NEGF methods, the transport properties of ZGNR and ZGNR doped with Si are studied by systematically computing the transmission spectrum. It is observed that Si barrier destroyed the electronic transport properties of ZGNR, an energy gap appeared for ZGNR, and variations from conductor to semiconductor are displayed. Its followed by a ZGNR grown on a SiO2 crystal substrate, while substituting the Graphene electrodes with the Gold ones, and its effect on transmission properties have been studied. Improvement in transmission properties observed due to the formation of C-O bonds between ZGNR and substrate that make the ZGNR corrugated. Finally, we modeled a nano-scale Field Effect Transistor by implementing a gate under SiO2 substrate. A very good I-ON/I-OFF ratio has been observed although the device thickness.

Abstract
Tipologia del documento
Tesi di laurea (Laurea magistrale)
Autore della tesi
Baniahmad, Ata
Relatore della tesi
Correlatore della tesi
Scuola
Corso di studio
Ordinamento Cds
DM270
Parole chiave
quantum,quantum mechanical,molecular electronics,graphene,graphene NanoRibbon,GNR,ZGNR,Nano-scale transistor,DFT,Density Functional Theory,NEGF,Non Equilibrium Green's Function,Quantum Transport,KS-DFT,Silicon Barrier,Transmission Spectrum,I(V) curve,I-V curve,GFET,Molecular Fuctionality
Data di discussione della Tesi
15 Marzo 2017
URI

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